High carrier mobility along the [111] orientation in Cu2O photoelectrodes.

Solar fuels offer a promising approach to provide sustainable fuels by harnessing sunlight1,2. Following a decade of advancement, Cu2O photocathodes are capable of delivering a performance comparable to that of photoelectrodes with established photovoltaic materials3-5. However, considerable bulk charge carrier recombination that is poorly understood still limits further advances in performance6. Here we demonstrate performance of Cu2O photocathodes beyond the state-of-the-art by exploiting a new conceptual understanding of carrier recombination and transport in single-crystal Cu2O thin films. Using ambient liquid-phase epitaxy, we present a new method to grow single-crystal Cu2O samples with three crystal orientations. Broadband femtosecond transient reflection spectroscopy measurements were used to quantify anisotropic optoelectronic properties, through which the carrier mobility along the [111] direction was found to be an order of magnitude higher than those along other orientations. Driven by these findings, we developed a polycrystalline Cu2O photocathode with an extraordinarily pure (111) orientation and (111) terminating facets using a simple and low-cost method, which delivers 7 mA cm-2 current density (more than 70% improvement compared to that of state-of-the-art electrodeposited devices) at 0.5 V versus a reversible hydrogen electrode under air mass 1.5 G illumination, and stable operation over at least 120 h.

Improving the photovoltage of Cu2O photocathodes with dual buffer layers.

Cuprous oxide (Cu2O) is a promising oxide material for photoelectrochemical water splitting (PEC), and increasing its photovoltage is the key to creating efficient overall PEC water-splitting devices. Previous reports are mostly focused on optimizing the energy band alignment between Cu2O and the n-type buffer layer to improve the photovoltage of Cu2O photocathodes. However, the band alignment between the n-type buffer layer and the protective layer is often ignored. In this work, Cu2O photocathodes with a single buffer layer (Ga2O3) and dual buffer layers (Ga2O3/ZnGeOx) are fabricated, and their PEC performances are compared. Results show that after inserting the second buffer layer (ZnGeOx), the onset potential of the Cu2O photocathode increases by 0.16 V. Operando electrochemical impedance spectroscopy measurements and analysis of the energy-level diagrams of each layer show that an energy level gradient between Ga2O3 and TiO2 is created when ZnGeOx is introduced, which eliminates the potential barrier at the interface of Ga2O3/TiO2 and improves the photovoltage of the Cu2O photocathode. Our work provides an effective approach to improve the photovoltage of photoelectrodes for solar water splitting by introducing dual buffer layers.

Elucidating the Role of Hypophosphite Treatment in Enhancing the Performance of BiVO4 Photoanode for Photoelectrochemical Water Oxidation.

Slow water oxidation kinetics and poor charge transport restrict the development of efficient BiVO4 photoanodes for photoelectrochemical (PEC) water splitting. Oxygen vacancy as an effective strategy can significantly enhance charge transport and improve conductivity in semiconductor photoanodes. Herein, we obtained BiVO4 photoanodes with appropriate oxygen vacancy by treating them with hypophosphite, which significantly improved the PEC performance. The synthesized photoanode exhibits a remarkable photocurrent density of 3.37 mA/cm2 at 1.23 V vs reversible hydrogen electrode with excellent stability. Interestingly, the performance improvement mainly originates from the oxygen vacancy rather than P doping. Our study provides insights in understanding the role of oxygen vacancy in PEC water splitting and strategies for designing more efficient photoelectrodes.